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Si4472DY
Vishay Siliconix
N-Channel 150 V (D-S) MOSFET
PRODUCT SUMMARY
FEATURES
I D (A)
V DS (V)
150
R DS(on) ( Ω )
0.045 at V GS = 10 V
0.047 at V GS = 8 V
7.7
7.5
a
Q g (Typ.)
23 nC
? Halogen-free According to IEC 61249-2-21
Definition
? Extremely Low Q gd for Switching Losses
? 100 % R g Tested
? 100 % Avalanche Tested
? Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
? Primary Side Switch
SO-8
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
G
D
Top V ie w
Orderin g Information: Si4472DY-T1-E3 (Lead (P b )-free)
Si4472DY-T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS (T A = 25 °C, unless otherwise noted)
S
N -Channel MOSFET
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
150
± 20
7.7
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
6.1
5.5 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
4.5 b, c
50
4.5
2.6 b, c
20
20
A
mJ
T C = 25 °C
5.9
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
3.8
3.1 b, c
W
T A = 70 °C
2 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient b, f
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
33
17
40
21
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 s.
d. Maximum under steady state conditions is 80 °C/W.
Document Number: 74283
S11-0209-Rev. C, 14-Feb-11
www.vishay.com
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